Dynamical effects and vacancy motion in silicon at high temperature

International Journal of Modern Physics C

Volumn 7, Issue 1, 1996, Pages 57-64

  Smargiassi, Enrico ^a   Car, Roberto ^b  

^a UNIVERSITÉ DE LYON   (France)

^b UNIVERSITY OF GENEVA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030541776     PISSN: 01291831     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129183196000065     Document Type: Article

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