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Volumn 12, Issue 1, 1996, Pages 21-25
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Determination of trace impurities on silicon-wafer surface by isotope dilution analysis using electrothermal vaporization/inductively coupled plasma mass spectrometry
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Author keywords
Copper; Electrothermal vaporization; Inductively coupled plasma mass spectrometry; Isotope dilution analysis; Lead; Silicon wafer; Zinc
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Indexed keywords
ABSORPTION SPECTROSCOPY;
ATOMIC ABSORPTION SPECTROMETRY;
COPPER;
ELECTRIC HEATING;
ETCHING;
INDUCTIVELY COUPLED PLASMA;
INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY;
LEAD;
MASS SPECTROMETERS;
NITRIC ACID;
RADIOISOTOPES;
TRACE ANALYSIS;
VAPORIZATION;
ZINC;
CALIBRATION METHOD;
ELECTROTHERMAL VAPORIZATION;
ELEMENT DETERMINATION;
GRAPHITE FURNACE ATOMIC ABSORPTION SPECTROMETRY;
ISOTOPE DILUTION ANALYSIS;
ISOTOPE-RATIO MEASUREMENTS;
RELATIVE STANDARD DEVIATIONS;
SILICON WAFER SURFACE;
SILICON WAFERS;
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EID: 0030528854
PISSN: 09106340
EISSN: None
Source Type: Journal
DOI: 10.2116/analsci.12.21 Document Type: Article |
Times cited : (13)
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References (26)
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