Measurement of the elastic stress of thin films deposited on gallium arsenide

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 4, 1996, Pages 2483-2487

  Mihailovich, R E ^a   Koscica, T ^a   Zeto, R J ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030494364     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580006     Document Type: Article

References (16)

1. J. L. Zhang and N. C. MacDonald, J. Microelectromech. Syst. 2, 66 (1993).
2. K. Hjort, J. A. Schweitz, and B. Hok, Proceedings of the IEEE MicroElectroMechanical Systems Workshop, Napa Valley, CA, Feb. 11-14, 1990, p. 73.
3. H. Ukita, Y. Uenishi, and H. Tanaka, Science 260, 786 (1993).
4. R. Abermann and R. Koch, Thin Solid Films 129, 71 (1985).
5. D. Winau, R. Koch, and K. H. Rieder, Vacuum 43, 525 (1992).
6. H. J. Schneeweiss and R. Abermann, Thin Solid Films 228, 40 (1993).
7. W. A. Strifler and C. W. Bates, J. Mater. Res. 6, 548 (1991).
8. H. Guckel, T. Randazzo, and D. W. Burns, J. Appl. Phys. 5, 1671 (1985).
9. G. McLane (private communication).
10. T. Abe, W. C. Messner, and M. L. Reed, J. Microelectromech. Syst. 4, 66 (1995).
11. Using thermal conductivity value from S. Adachi, J. Appl. Phys. 58, R1 (1985).
12. At deposition pressure of 4 mT and temperature of 250 °C, gas mean free path is over 1 cm. For such conditions, there should be little film coverage on the bottom surface of a cantilever 5 μm wide and 2.5 μm above the substrate. Hence, the microcantilever method may be used to measure stress for this film.
13. K. Hjort, J. Soderkvist, and J.-A. Schweitz, J. Micromech. Microeng. 4, 1 (1994).
14. J. R. Flemish and R. L. Pfeffer, J. Appl. Phys. 74, 3277 (1993).
15. D. Wang, M.S. thesis, Cornell University, Ithaca, NY (1992).
16. Y. Shigesato, S. Takaki, and T. Haranoh, J. Appl. Phys. 71, 3356 (1992).