Quantum dots in the strong confinement regime: A model system for gain in quasi zero-dimensional semiconductors

Chemical Physics

Volumn 210, Issue 1-2 SPEC. ISS., 1996, Pages 71-78

  Giessen, H ^a,b   Woggon, U ^c   Fluegel, B ^a   Mohs, G ^a   Hu, Y Z ^a   Koch, S W ^d   Peyghambarian, N ^a  

^a UNIVERSITY OF ARIZONA   (United States)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c UNIVERSITY OF KARLSRUHE   (Germany)

^d PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030486545     PISSN: 03010104     EISSN: None     Source Type: Journal    
DOI: 10.1016/0301-0104(96)00193-0     Document Type: Article

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