Highly spatially resolved X-ray analysis of semiconductor alloys and nanostructures in a scanning transmission electron microscope

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 74, Issue 6, 1996, Pages 1421-1437

  Bangert, U ^a   Harvey, A J ^a   Dieker, C ^b   Hartmann, A ^b   Keyse, R ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030480901     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418619608240733     Document Type: Article

References (17)

1. Arakawa, T., Tsukamoto, S., Nagamune, Y., and Nishioka, M., 1993, Jap. J. appl. Phys. Lett., 32, L1377.
2. Bangert, U., Harvey, A. J., Dieker, C., and Hardtdegen, H., 1995, J. Cryst. Growth, 152, 115.
3. Bangert, U., Harvey, A. J., Wilkinson, V. A., Dieker, C., Jowett, J. M., Smith, A. D., Perrin, S. D., and Gibbings, C. J., 1993, J. Cryst. Growth, 132, 231.
4. Cliff, G., Powell, D. J., Pilkington, R., Champness, P. E., and Lorimer, G. W., 1983, Microscopy of Semiconducting Materials, Institute of Physics Conference Series No. 68 (Bristol: Institute of Physics), p. 63.
5. Goldstein, J. I., Costley, J. L., Lorimer, G. W., and Read, S. J. B., 1977, Scanning Electron Microscopy, 77, Vol. 1, edited by O. Johari (Chicago, Illinois: Illinois Institute of Technology and Research Institute), p. 315.
6. Hartmann, A., Dieker, C., Bangert, U., Loo, R. and Vescan, L. 1995c, Appl. Surf. Sci. (submitted).
7. Hartmann, A., Vescan, L., Dieker, C., and Lueth, H., 1995a, Mater. Sci. Technol., 11, 410.
8. Hartmann, A., Vescan, L., Dieker, C., and Lueth, H., 1995b, J. appl. Phys., 77, 1995.
9. Kapon, E., Hwang, D. M., and Bhat, R., 1989, Phys. Rev. Lett., 63, 430.
10. Ourmazd, A., Taylor, D. W., Cunningham, J., and Tu, W. C., 1989, Phys. Rev. Lett., 62, 933.
11. Pennycook, S. J., Jesson, D. E., and Chisholm, M. F., 1991, Microscopy of Semiconducting Materials, Institute of Physics Conference Series No. 117 (Bristol: Institute of Physics), p. 27.
12. Ponchet, A., Rocher, A., Ougazzaden, A., and Mircea, A., 1994, J. appl. Phys., 75, 7881.
13. Simhoney, S., Kapon, E., Colas, E., Hwang, D. M., and Stoffel, M. G., 1991, Appl. Phys. Lett., 59, 2225.
14. Stenkamp, D., and Jaeger, W., 1993, Microscopy of Semiconducting Materials, Institute of Physics Conference Series No. 134 (Bristol: Institute of Physics), p. 15.
15. Usami, N., Mine, T., Fukatsu, S., and Shiraki, Y., 1994, Appl. Phys. Lett., 64, 1126.
16. Walther M., Kapon, E., Caneau, C., Hwang, D. M., and Schiavone, L. M., 1993, Appl. Phys. Lett., 62, 2170.
17. Walther, T., Boothroyd C. B., and Humphreys, C. J., 1995, Microscopy of Semiconducting Materials, Institute of Physics Conference Series No. 146 (Bristol: Institute of Physics), p. 11.