Thiosulfate oxidation: Catalysis of synthetic sphalerite doped with transition metals

Geochimica et Cosmochimica Acta

Volumn 60, Issue 23, 1996, Pages 4701-4710

  Xu, Yong ^a   Schoonen, Martin A A ^a   Strongin, Daniel R ^a  

^a STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSIS; OXIDATION; SPHALERITE; THIOSULPHATE;

EID: 0030439061     PISSN: 00167037     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0016-7037(96)00279-7     Document Type: Article

References (38)

1. Bard A. J. and Faulkner L. R. (1980) Electrochemical Methods: Fundamentals and Applications. Wiley.
2. Bockris J. O. M. and Khan S. U. M. (1993) Surface Electrochemistry, A Molecular Level Approach. Plenum.
3. Butler I. B., Schoonen M. A. A., and Rickard D. T. (1994) Removal of dissolved oxygen from water: a comparison of four common techniques. Talanta 41, 211-215.
4. Caldas M. J., Fazzio A., and Zunger A. (1984) A universal trend in the binding energies of deep impurities in semiconductors. Appl. Phys. Lett. 45, 671-673.
5. Crundwell F. K. (1988) Effect of iron impurity in zinc sulfide on the rate of dissolution. AIChE Journal 34, 1128-1134.
6. Duke (1983) Atomic geometry of semiconductor surface: determination and relation to chemical bonding. Adv. Ceram. 6, 1-14.
7. Fan F. R., Leempoel P., and Bard A. J. (1982) Semiconductor electrodes. LI. Efficient electroluminescence at ZnS electrode in aqueous electrolytes. J. Electrochem. Soc. 130, 1866-1874.
8. Fazzio A., Caldas M. J., and Zunger A. (1984) Many-electron multiplet effects in the spectra 3d impurities in heteropolar semiconductors. Phys. Rev. B. 30, 3430-3454.
9. Freund T. (1969) Electron injection into zinc oxide. J. Phys. Chem. 73, 468-469.
10. Harrison W. A. (1976) Surface reconstruction on semiconductors. Surf. Sci. 55, 1-9.
11. Heitz R., Hoffmann A., Thurian P., and Broser I. (1992) The copper center: a shallow acceptor in ZnS and CdS. J. Phys. Condens. Matter 4, 157-168.
12. Inoue T., Fujishima A., Konishi S., and Honda K. (1979) Photoelectrocatalytic reduction of carbon dioxide in aqueous suspensions of semiconductor powders. Nature 277, 637-638.
13. Kanemoto M., Shiragami T., Pac C., and Yanagida S. (1992) Semiconductor photocatalysis. Effective photoreduction of carbon dioxide catalyzed by ZnS quantum crystallites with low density of surface defects. J. Phys. Chem. 96, 3521-3526.
14. Kelly D. P., Chambers L. A., and Trudinger P. A. (1969) Cyanolysis and spectrophotometric estimation of trithionate in mixture with thiosulfate and tetrathionate. Anal. Chem. 41, 891-901.
15. Kohl P.A. and Bard A. J. (1977) Semiconductor electrodes. 13. Characterization and behavior of n-type ZnO, CdS, and GaP electrodes. J. Amer. Chem. Soc. 99, 7531-7539.
16. xS electronic structure. J. Phys. Condens. Matter 6, 3369-3378.
17. Luther G. W., III. (1990) The frontier-molecular-orbital theory approach in geochemical process. In Aquatic Chemical Kinetics (ed. W. Stumm), Chap. 6, pp. 173-18-98. Wiley.
18. Lyons D. and Nickless G. (1968) The lower oxy-acids of sulfur. In Inorganic Sulphur Chemistry (ed. G. Nickless), Chap. 14, pp. 509-532. Elsevier.
19. Morrison S. R. (1990) The Chemical Physics of Surfaces. Plenum.
20. Moses C. O., Nordstrom D. K., and Mills A. L. (1984) Sampling and analyzing mixtures of sulphate, sulphite, thiosulfate and polythionate. Talanta 31, 331-339.
21. 2O from 25 to 150°C: Influence of access of oxygen in sulphide solution. Geochim. Cosmochim. Acta 56, 3157-3178.
22. Reber J. and Meier K. (1984) Photochemical production of hydrogen with zinc sulfide suspensions. J. Phys. Chem. 88, 5903-5913.
23. Rossler U. (1969) Energy band of hexagonal II-VI semiconductors. Phys. Rev. 184, 733-738.
24. Schroer P., Kruger P., and Pollmann J. (1993) First-principles calculation of the electronic structure of wurzite semiconductors ZnO and ZnS. Phys. Rev. B 47, 6971-6979.
25. Shuey R. T. (1975) Semiconducting Ore Minerals. Elsevier.
26. Somorjai G. A. (1994) Introduction to Surface Chemistry and Catalysis. Wiley.
27. xTe. Phys. Rev. B 33, 1206-1219.
28. Tossell J. and Vaughan D. J. (1987) Electronic structure and chemical reactivity of the surface of galena. Can. Mineral. 25, 381-392.
29. Tian Z. and Shen X. (1989) Defect-molecular model calculations of 3d transition metal ions in II-VI semiconductors. J. Appl. Phys. 66, 2141-2149.
30. Vaughan D. J. and Craig J. R. (1978) Mineral Chemistry of Metal Sulfides. Cambridge Univ. Press.
31. Vaughan D. J., Tossell J., and Johnson K. H. (1974) The bonding of ferrous iron to sulfur and oxygen in tetrahedral coordination: a comparative study using SCF Xa scattered wave molecular orbital calculations. Geochim. Cosmochim. Acta 38, 993-1005.
32. Waite T. D. (1990) Photo-redox processes at mineral-water interface. In Mineral-Water Interface Geochemistry (ed. M. F. Hochella and A. F. White); Rev. Mineral. 23, Chap. 14, pp. 559-603.
33. x Te semiconductor alloy and its binary constituents. Phys. Rev. B. 35, 2340-2361.
34. Xu Y. and Schoonen M. A. A. (1995) The stability of thiosulfate in the presence of pyrite in low-temperature aqueous solutions. Geochim. Cosmochim. Acta 59, 4605-4622.
35. Yanagida S., Yoshiya M., Shiragami T., and Pac C. (1990) Semiconductor photocatalysis. Quantitative photoreduction of aliphatic ketones to alcohols using defect-free ZnS Quantum crystallites. J. Phys. Chem. 94, 3104-3111.
36. Zakrzewski A. and Goldlewski, (1990) Isolated iron and chromium as recombination centers in ZnS. J. Appl. Phys. 67, 2457-2461.
37. Zhang Q., Xu Z., and Finch J. A. (1995a) Surface ionization and complexation at the sphalerite/water interface. 1. Computation of electrical double-layer properties of sphalerite in a simple electrolyte. J. Colloid Interface Sci. 169, 414-421.
38. Zhang Q., Xu Z., and Finch J. A. (1995b) Surface ionization and complexation at the sphalerite/water interface. 2. Computation of electrical double-layer properties of sphalerite in the presence of iron ions a simple electrolyte. J. Colloid Interface Sci. 175, 61-67.