Dynamic measurements of damage generation in single crystal silicon due to sliding contact with a spherical diamond

Wear

Volumn 200, Issue 1-2, 1996, Pages 238-243

  Li, Yuheng ^a   Danyluk, Steven ^b  

^a MOTOROLA INC   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Four point probe; Hertzian crack formation; Single crystal silicon; Subsurface damage; Wafer machining

Indexed keywords

CRACK INITIATION; CRACK PROPAGATION; CRYSTAL ORIENTATION; DIAMONDS; ELECTRIC RESISTANCE; MACHINING; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; VOLTAGE MEASUREMENT;

FOUR POINT PROBE; HERTZIAN CRACK FORMATION; SUBSURFACE DAMAGE;

SILICON WAFERS;

CONTACT-SLIDING; DIAMONDS; SILICON;

EID: 0030436720     PISSN: 00431648     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0043-1648(96)07294-8     Document Type: Article

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