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Volumn 66, Issue 3-4, 1996, Pages 133-139

A new method to perform in situ current voltage curves with an electrochemical scanning tunnelling microscope

Author keywords

Electrochemistry; Instrumentation; Scanning probe microscopy

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTROCHEMISTRY; ELECTROLYTES; POLARIZATION; SEMICONDUCTING SILICON;

EID: 0030436340     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(97)00011-9     Document Type: Article
Times cited : (10)

References (26)
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    • note
    • [10] The fact that the minimum tip to sample distance has to be bigger at the positive part of the I/V curve than at the negative part is consistent with the behaviour obtained in Fig. 3, where it is shown that for n-type silicon, the current level is higher at positive bias than at negative bias.
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