Growth of high quality (In,Ga,Al)N/GaN heterostructure materials and devices by atmospheric pressure MOCVD

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 23-31

  Denbaars, S P ^a   Keller, S ^a   Keller, B P ^a   Wu, Y F ^a   Kapolnek, D ^a   Mishra, U K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRIC BREAKDOWN OF SOLIDS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE;

GALLIUM NITRIDE FILMS;

HETEROJUNCTIONS;

EID: 0030421824     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-23     Document Type: Conference Paper

References (13)