Er-doping of GaN and related alloys

Materials Research Society Symposium - Proceedings

Volumn 422, Issue , 1996, Pages 47-56

  Pearton, S J ^a   Abernathy, C R ^a   MacKenzie, J D ^a   Schwartz, R N ^a   Wilson, R G ^a   Zavada, J M ^a   Shul, R J ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ERBIUM COMPOUNDS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; ION IMPLANTATION; LASER ACCESSORIES; MOLECULAR BEAM EPITAXY; NITRIDES; ORGANOMETALLICS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

ALUMINUM NITRIDE; BINARY NITRIDES; ERBIUM BISTRIMETHYLSILYLAMIDE; GALLIUM NITRIDE; INDIUM ALUMINUM NITRIDE; INDIUM GALLIUM NITRIDE; MICRODISK LASER STRUCTURES;

ERBIUM;

EID: 0030421763     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-422-47     Document Type: Conference Paper

References (32)