Plasma induced changes to TCO/a-Si:H interfaces

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 57-62

  Wallinga, J ^a   Knoesen, D ^a   Hamers, E A G ^a   van Sark, W G J H M ^a   van der Weg, W F ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CONDUCTIVE MATERIALS; CRYSTAL GROWTH; HYDROGENATION; ION BOMBARDMENT; MODIFICATION; OXIDES; PLASMA APPLICATIONS; TRANSMISSION ELECTRON MICROSCOPY;

DC BIAS VOLTAGE; ION ENERGY; ION FLUX; PLASMA INDUCED CHANGES; TRANSPARENT CONDUCTIVE OXIDE;

INTERFACES (MATERIALS);

EID: 0030421470     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-57     Document Type: Conference Paper

References (9)