ZnSe window layers for GaAs solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 65-68

  Yater, J A ^a   Landis, G A ^a   Bailey, S G ^a   Olsen, L C ^a   Addis, F W ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SHORT CIRCUIT CURRENTS; SOLAR CELLS; THICK FILMS;

GALLIUM ARSENIDE SOLAR CELLS; HETEROINTERFACE; LATTICE MISMATCHING; PHOTOLUMINESCENCE INTENSITY; SURFACE RECOMBINATION; ZINC SELENIUM WINDOW LAYERS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030421164     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/pvsc.1996.563947     Document Type: Conference Paper

References (11)