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Volumn 428, Issue , 1996, Pages 437-442
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Novel method for studying degradation related to plasma processing of silicon wafers
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE CARRIERS;
DEGRADATION;
HEAVY METALS;
PLASMA DIAGNOSTICS;
RADIATION DAMAGE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DEVICE TESTING;
SURFACE PROPERTIES;
ULTRAVIOLET RADIATION;
VOLTAGE MEASUREMENT;
SURFACE PHOTOVOLTAGE (SPV) MEASUREMENT;
SILICON WAFERS;
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EID: 0030420870
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (7)
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References (10)
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