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Volumn , Issue , 1996, Pages 163-166

Distortion Analysis of GaAs MESFETs Based on Physical Model using PISCES-HB

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; CAPACITORS; COMPUTER SIMULATION; HARMONIC ANALYSIS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SIGNAL DISTORTION;

EID: 0030419044     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553146     Document Type: Conference Paper
Times cited : (15)

References (6)
  • 4
    • 0004674948 scopus 로고
    • Large signal frequency domain device analysis via the harmonic balance technique
    • Erlangen, Germany, Sep
    • B. Troyanovsky, Z. Yu, and R.W. Dutton, "Large signal frequency domain device analysis via the harmonic balance technique," SISDEP '95, pp. 114-117, Erlangen, Germany, Sep. 1995.
    • (1995) SISDEP '95 , pp. 114-117
    • Troyanovsky, B.1    Yu, Z.2    Dutton, R.W.3
  • 5
    • 0029516524 scopus 로고
    • Relaxation-based harmonic balance technique for semiconductor device simulation
    • San Jose, CA, Nov
    • B. Troyanovsky, Z. Yu, L. So, and R. W. Dutton, "Relaxation-based harmonic balance technique for semiconductor device simulation," ICCAD '95, pp. 700-703, San Jose, CA, Nov. 1995.
    • (1995) ICCAD '95 , pp. 700-703
    • Troyanovsky, B.1    Yu, Z.2    So, L.3    Dutton, R.W.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.