Analysis of the infrared transmission data of hydrogenated amorphous silicon film fabricated by high rate PECVD

Journal of Electronic Materials

Volumn 25, Issue 12, 1996, Pages 1837-1840

  Hu, W ^a   Chan, Florence Y M ^a   Webb, D P ^a   Chan, Y C ^a   Lam, Y W ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Absorption; Hydrogenated amorphous silicon; Inhomogeneity; Optical band gap; Plasma enhanced chemical vapor deposition (PECVD); Transmission

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INFRARED RADIATION; LIGHT ABSORPTION; LIGHT REFRACTION; THIN FILMS;

INHOMOGENEITY; PECVD;

AMORPHOUS SILICON;

EID: 0030418863     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02657162     Document Type: Article

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