Room-temperature luminescence and 1 μm junction laser operation of InxGa1-xAs/GaAs quantum boxes formed by self-organized molecular beam epitaxy

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1996, Pages 322-323

  Phillips, J ^a   Kamath, K ^a   Sosnowski, T ^a   Norris, T ^a   Bhattacharya, P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM BOXES;

SEMICONDUCTOR LASERS;

EID: 0030418083     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)