On the nature of leakage current of fast recovery silicon PN junctions

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 1996, Pages 455-458

  Obreja, V V N ^a   Dinoiu, Gh ^a  

^a ICCE   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON BEAMS; GOLD; HIGH TEMPERATURE EFFECTS; IRRADIATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

FAST RECOVERY; LEAKAGE CURRENT;

SEMICONDUCTOR JUNCTIONS;

EID: 0030417797     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)