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Volumn 100, Issue 12, 1996, Pages 821-824

Influence of hydrostatic pressure on the diffusion of hydrogen in n-GaAs:Si

Author keywords

A. semiconductors; C. impurities in semiconductors; E. high pressure

Indexed keywords

DEUTERIUM; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); HYDROGEN; PRESSURE EFFECTS; SILICON;

EID: 0030417535     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00517-0     Document Type: Article
Times cited : (1)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.