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Volumn 424, Issue , 1996, Pages 231-236
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Solid-phase crystallization of amorphous Si0.7Ge0.3/Si and Si/Si0.7Ge0.3 bilayer films on SiO2
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS FILMS;
AMORPHOUS SILICON;
ANNEALING;
CRYSTAL DEFECTS;
CRYSTAL MICROSTRUCTURE;
CRYSTAL ORIENTATION;
CRYSTALLIZATION;
GRAIN SIZE AND SHAPE;
MORPHOLOGY;
SILICA;
SILICON WAFERS;
X RAY CRYSTALLOGRAPHY;
BILAYER FILMS;
LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);
SOLID PHASE CRYSTALLIZATION;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0030417029
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-424-231 Document Type: Conference Paper |
Times cited : (1)
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References (9)
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