Polycrystalline silicon films formed by solid-phase crystallization of amorphous silicon: The substrate effects on crystallization kinetics and mechanism

Materials Research Society Symposium - Proceedings

Volumn 424, Issue , 1996, Pages 243-248

  Song, Y H ^a   Kang, S Y ^a   Cho, K I ^a   Yoo, H J ^a   Kim, J H ^a   Lee, J Y ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; QUARTZ; RAMAN SCATTERING; REACTION KINETICS; SILICON WAFERS; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); SOLID PHASE CRYSTALLIZATION;

AMORPHOUS SILICON;

EID: 0030417028     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-424-243     Document Type: Conference Paper

References (9)