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R.-P. Pan, H.D. Wei and Y.R. Shen, Phys. Rev. B 39 (1989) 1229; B. Koopmans, M.G. Koerkamp, Th. Rasing and H. van den Berg, Phys. Rev. Lett. 74 (1995) 3692, and references therein.
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0001765202
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There is also wide literature on lattice effects on SHG at semiconductor surfaces. For studies on vicinal Si surfaces see, for example: C.W. van Hasselt, M.A. Verheijen and Th. Rasing, Phys. Rev. B 42 (1990) 9263; G. Lüpke, D.J. Bottomley and H.M. van Driel, Phys. Rev. B 47 (1993) 10 389; G. Lüpke, C. Meyer, U. Emmerichs, F. Wolter and H. Kurz, Phys. Rev. B 50 (1994) 17 292; J.R. Power, J.D. O'Mahony, S. Chandola and J.F. McGilp, Phys. Rev. Lett. 75 (1995) 1138.
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Verheijen, M.A.2
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13
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0001638845
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There is also wide literature on lattice effects on SHG at semiconductor surfaces. For studies on vicinal Si surfaces see, for example: C.W. van Hasselt, M.A. Verheijen and Th. Rasing, Phys. Rev. B 42 (1990) 9263; G. Lüpke, D.J. Bottomley and H.M. van Driel, Phys. Rev. B 47 (1993) 10 389; G. Lüpke, C. Meyer, U. Emmerichs, F. Wolter and H. Kurz, Phys. Rev. B 50 (1994) 17 292; J.R. Power, J.D. O'Mahony, S. Chandola and J.F. McGilp, Phys. Rev. Lett. 75 (1995) 1138.
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Van Driel, H.M.3
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14
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4243736815
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-
There is also wide literature on lattice effects on SHG at semiconductor surfaces. For studies on vicinal Si surfaces see, for example: C.W. van Hasselt, M.A. Verheijen and Th. Rasing, Phys. Rev. B 42 (1990) 9263; G. Lüpke, D.J. Bottomley and H.M. van Driel, Phys. Rev. B 47 (1993) 10 389; G. Lüpke, C. Meyer, U. Emmerichs, F. Wolter and H. Kurz, Phys. Rev. B 50 (1994) 17 292; J.R. Power, J.D. O'Mahony, S. Chandola and J.F. McGilp, Phys. Rev. Lett. 75 (1995) 1138.
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Phys. Rev. B
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Lüpke, G.1
Meyer, C.2
Emmerichs, U.3
Wolter, F.4
Kurz, H.5
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15
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4243236149
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There is also wide literature on lattice effects on SHG at semiconductor surfaces. For studies on vicinal Si surfaces see, for example: C.W. van Hasselt, M.A. Verheijen and Th. Rasing, Phys. Rev. B 42 (1990) 9263; G. Lüpke, D.J. Bottomley and H.M. van Driel, Phys. Rev. B 47 (1993) 10 389; G. Lüpke, C. Meyer, U. Emmerichs, F. Wolter and H. Kurz, Phys. Rev. B 50 (1994) 17 292; J.R. Power, J.D. O'Mahony, S. Chandola and J.F. McGilp, Phys. Rev. Lett. 75 (1995) 1138.
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Phys. Rev. Lett.
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0041825677
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note
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In contrast to simple metals, at vicinal semiconductor surfaces [7] which are much more tight-binding-like, the step contribution can be more complex. In particular, it may reflect orientation of the dangling bonds at the steps, etc.
-
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27
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0029273624
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A similar idea is recently used to separate the surface and bulk contributions to SHG from a vicinal Si(111) surface. See D.J. Bottomley, G. Lüpke, C. Meyer and Y. Makita, Opt. Lett. 20 (1995) 453.
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Rubtsov, A.N.1
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