Etched corner reflector array lasers: A detailed study

IEEE Photonics Technology Letters

Volumn 8, Issue 12, 1996, Pages 1609-1611

  Jian, Benjamin B ^a,b  

^a IEEE

^b School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTROMAGNETIC WAVE DIFFRACTION; ETCHING; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; LASER PULSES; MIRRORS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

ETCHED CORNER REFLECTOR ARRAY LASERS; UNGUIDED PHOTONIC INTEGRATED CIRCUITS;

QUANTUM WELL LASERS;

EID: 0030414333     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.544693     Document Type: Article

References (6)

1. M. Hagberg, A. Larsson, and S. T. Eng, "Single-ended output I GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector," Appl. Phys. Lett., vol. 56, pp. 1934-1936, 1990.
2. Z. J. Fang, G. M. Smith, D. V. Forbes, and J. J. Coleman, "A corner reflector InGaAs-GaAs strained layer single quantum well coupled laser array," IEEE Photon. Technol. Lett., vol. 6, pp. 10-12, 1994.
3. B. B. Jian, "Continuous-wave operation of a monolithic two-mode cross-coupled optical flip-flop with etched laser mirrors," in Electron. Lett., vol. 32, pp. 1923-1925, 1996.
4. W. J. Grande, W. D. Braddock, J. R. Shealy, and C. L. Tang, "One-step two-level etching technique for monolithic integrated optics," Appl. ', Phys. Lett., vol. 51, pp. 2189-2191, 1987.
5. P. W. Milonni and J. H. Eberly, Lasers. New York: Wiley-Interscience, 1988.
6. J, L. Merz and R. A. Logan, "GaAs double heterostructure lasers fabricated by wet chemical etching," J. Appl. Phys., vol. 47, pp. 3503-3509, 1976.