Floating-body concerns for SOI dynamic random access memory (DRAM)

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 136-137

  Mandelman, J A ^a   Barth, J E ^a   DeBrosse, J K ^a   Dennard, R H ^a   Kalter, H L ^a   Gautier, J ^a   Hanafi, H I ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; LEAKAGE CURRENTS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); FLOATING BODY; SUBSTRATE SENSITIVITY; SUBTHRESHOLD SLOPE; THRESHOLD VOLTAGE;

RANDOM ACCESS STORAGE;

EID: 0030414095     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)