Electrical and photoelectrical properties of glassy As2Se3 doped with Mn, Dy and Sm

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 1996, Pages 313-316

  Iovu, M ^a   Andriesh, A ^a   Shutov, S ^a   Bulgaru, M ^a   Popescu, M ^a   Sava, F ^a   Lorinczi, A ^a  

^a INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; DYSPROSIUM; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; MANGANESE; PHOTOCONDUCTIVITY; PHOTOELECTRICITY; SAMARIUM; SEMICONDUCTOR DOPING; X RAY CRYSTALLOGRAPHY;

CHALCOGENIDE GLASSY SEMICONDUCTOR; DOPANTS;

SEMICONDUCTING GLASS;

EID: 0030413840     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)