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Volumn , Issue , 1996, Pages 328-332
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New chemistry for a high-density plasma etcher that improves etch rate loading on the TiN ARC layer when geometries are below 0.5 micron
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Author keywords
[No Author keywords available]
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Indexed keywords
ASPECT RATIO;
COMPOSITION;
MATERIALS TESTING;
PERFORMANCE;
PLASMA ETCHING;
TITANIUM NITRIDE;
ASPECT RATIO DEPENDENT ETCH;
ETCH RATE LOADING;
HIGH DENSITY PLASMA ETCHER;
MICROLOADING;
PROCESS PERFORMANCE;
SEMICONDUCTOR DEVICE MANUFACTURE;
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EID: 0030413050
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (3)
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References (4)
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