An FT-CCD Imager with true 2.4 x 2.4 pm2Pixels in Double Membrane Poly-Si Technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 907-910

  Peek, H L ^a   Verbugt, D W ^a   Beenhakkers, M J ^a   Huinink, W F ^a   ACKleimann, ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

POLYCRYSTALLINE MATERIALS; CHARGE COUPLED DEVICES; ELECTRODES; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; PHOTOLITHOGRAPHY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CCD IMAGERS; GATE ELECTRODES; NARROW CHANNEL; OPTICAL FORMATS; OPTIMIZED PROCESS; PIXEL SIZE; PROCESSING TECHNOLOGIES; SI LAYER; SI-TECHNOLOGY; THIN MEMBRANE;

REFRACTORY METAL COMPOUNDS; IMAGE SENSORS;

GATE ELECTRODES; POLYSILICON TECHNOLOGY; SHUNT WIRING TECHNOLOGY;

EID: 0030412788     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554126     Document Type: Conference Paper

References (6)

1. [l] H.L.Peek et al. “Groove-fill of Tungsten and Poly-Si Membrane Technology for High Performance (HDTV) FT-CCD Imagers,”IEDM Techn. Digest, p. 567,1993.
2. H.L.Peek ‘Twin-layer PCCD Performance for Different Doping Levels of the Surface Layer,” IEEE Trans.Electr. Dev., vol. ED-23, no. 2, p. 235,1976.
3. J.T. Bosiers et al. “A ¼-inch True Progresive Scan 640(H) x 480(V) FT-CCD for multimedia applications,” IEDM Techn.Digest, p. 709, 1994.
4. Y. Naito etal. “A 1/3-inch 360K Pixel Progressive Scan CCD Image Sensor,” IEEE Trans. On Cons. Electronics, vol. 41, no. 3, p. 442, 1995
5. Y. Okada etal. “A 1/5-inch 270000 Pixels FT-CCD Color Iinage Sensor,”J. of the Institute of Television Engineers of Japan,vol. 49, no. 2, p. 176, 1995.
6. J.T.Bosim et al. “Design Options for ¼-inch FTCCD Pixels,” IEEE Workshop on CCD andAdvanced Image Sensors, 1995.