Stopping powers of GaAs for 0.3-2.5 MeV 1H and 4He ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 119, Issue 4, 1996, Pages 457-462

  Rajatora, M ^a   Vakevainen K ^a   Ahlgren, T ^a   Rauhala, E ^a   Raisanen J ^a   Rakennus, K ^b  

^a UNIVERSITY OF HELSINKI   (Finland)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ION BEAMS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

ION BACKSCATTERING; SEMI-EMPIRICAL CALCULATIONS; STOPPING POWER;

ION BOMBARDMENT;

EID: 0030412645     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00629-5     Document Type: Article

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