The influence of deposition parameters on the structure of Al, Zr and W coatings deposited by closed-field unbalanced magnetron sputtering

Surface and Coatings Technology

Volumn 86-87, Issue PART 1, 1996, Pages 425-431

  Kelly, P J ^a   Arnell, R D ^a  

^a UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

Closed field unbalanced magnetron sputtering; Structure zone models; Taguchi method

Indexed keywords

ADHESION; CRYSTAL STRUCTURE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; MAGNETRON SPUTTERING; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TEMPERATURE MEASUREMENT;

CLOSED FIELD UNBALANCED MAGNETRON SPUTTERING; DEPOSITION PARAMETER; DEPOSITION RATE; ION CURRENT DENSITY; ION TO ATOM RATIO; STRUCTURE ZONE MODELS; SUBSTRATE TEMPERATURE; TAGUCHI METHOD;

METALLIC FILMS;

EID: 0030412493     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(96)02996-9     Document Type: Article

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