Reduction of selectivity loss probability on dielectric surface during chemical vapor deposition of tungsten using fluorinated oxide and removing silanol units on dielectric surface

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

Volumn 35, Issue 12 B, 1996, Pages 6347-6695

  Chang, Kow Ming ^a   Wang, Shih Wei ^a   Li, Chii Horng ^a   Tsai, Jung Yu ^a   Yeh, Ta Hsun ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; DOPING (ADDITIVES); MOLECULES; NUCLEATION; OXIDES; PERMITTIVITY; SILICON COMPOUNDS; SURFACE CLEANING; SURFACES;

DIELECTRIC SURFACES; ELECTRONEGATIVITY; FLUORINATED OXIDE; INTERMETAL DIELECTRIC; PLASMA PRETREATMENT; SELECTIVE GROWTH; SELECTIVITY LOSS PROBABILITY; SILANOL; WET CLEANING;

TUNGSTEN;

EID: 0030412202     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Review

References (16)