Strain effects on exciton saturation in quantum-well optical modulator devices

Journal of the Optical Society of America B: Optical Physics

Volumn 13, Issue 12, 1996, Pages 2750-2758

  Sengers, Adriaan J ^a   Tsang, Leung ^a   Chuang, Shun Lien ^b  

^a University of Washington   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; APPROXIMATION THEORY; BAND STRUCTURE; EIGENVALUES AND EIGENFUNCTIONS; ELECTRONS; EXCITONS; GREEN'S FUNCTION; LIGHT MODULATORS; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

LUTTINGER-KOHN PARAMETERS; QUANTUM NUMBER; QUANTUM WELL OPTICAL MODULATORS; SATURATION INTENSITY; STRAIN EFFECTS; VALENCE BAND MIXING;

NONLINEAR OPTICS;

EID: 0030411060     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.13.002750     Document Type: Article

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