Atomic and electronic structure of silicon clusters at finite temperature

Materials Science Forum

Volumn 232, Issue , 1996, Pages 87-102

  Chelikowsky, J R ^a   Binggeli, N ^b  

^a University of Minnesota   (United States)

^b INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

Author keywords

Photoemission; Quantum Simulations; Silicon Clusters

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GEOMETRY; PHOTOEMISSION; QUANTUM THEORY;

AB INITIO METHOD; ATOMIC RELAXATION; ELECTRONIC SPECTRA; FINITE TEMPERATURE; GROUND STATE STRUCTURE; KINETIC EFFECTS; NON EQUILIBRIUM STRUCTURE; QUANTUM SIMULATION; SILICON CLUSTER;

SEMICONDUCTING SILICON;

EID: 0030410772     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.232.87     Document Type: Article

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