Dislocation-free undoped semi-insulating GaAs epilayers prepared by chloride chemical vapor deposition and successive wafer annealing

Journal of Electronic Materials

Volumn 25, Issue 12, 1996, Pages 1841-1844

  Noda, A ^a   Kohiro, K ^a   Oda, O ^a  

^a JAPAN ENERGY CORPORATION   (Japan)

Author keywords

Annealing; Dislocation free; GaAs; Semi insulating epilayer

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; THIN FILMS;

DISLOCATION-FREE; SEMI-INSULATING EPILAYER;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030410299     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02657163     Document Type: Article

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