A CAD-Compatible Non-Quasi-Static MOSFET Model

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 151-154

  Liu, William ^a   Bowen, Chris ^a   Chang, Mi Chang ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; BOUNDARY CONDITIONS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC CURRENTS; INTEGRATED CIRCUIT LAYOUT; PARTIAL DIFFERENTIAL EQUATIONS;

BASE CURRENTS; MOSFETS; NON QUASI STATIC; NON-QUASI-STATIC MODELS; RMS ERRORS;

COMPUTER AIDED DESIGN; SEMICONDUCTOR DEVICE MODELS;

NON QUASI STATIC MODEL; TURCHETTI MODEL;

EID: 0030409592     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553143     Document Type: Conference Paper

References (3)

1. M. Chan K. Hui, R. Neff, C. Hu, and K.K. KO, 1994 IEDM, p. 169.
2. E. Dubois and E. Robilliart, 1995 IEDM, p. 945. C. Turchetti, P. Mancini, and G. Masetti, IEEE J. Solid-state Circuits., p. 827, 1986.
3. Medici manual, Two-Dimensional Device Simulation Program, Technology Modeling Associates Inc.