High-frequency (f ∼ 1 THz) studies of quantum-effect devices

Semiconductor Science and Technology

Volumn 11, Issue 12, 1996, Pages 1888-1894

  Hu, Qing ^a   Verghese, S ^a   Wyss, R A ^a   Schapers Th ^a,b   Del Alamo, J ^a   Feng, S ^c   Yakubo, K ^c   Rooks, M J ^d   Melloch, M R ^e   Forster A ^b  

^a Department of Electrical Engineering and Computer Science   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Department of Molecular Biology and Genetics   (United States)

^e PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNA COUPLED QUANTUM EFFECT DEVICES; DUAL GATE DEVICES; RADIATION FREQUENCIES; RADIATION INDUCED CURRENT;

ANTENNA RADIATION; ELECTRONIC DENSITY OF STATES; NATURAL FREQUENCIES; PHOTONS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

QUANTUM INTERFERENCE DEVICES;

EID: 0030409545     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/12/021     Document Type: Article

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