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Volumn 431, Issue , 1996, Pages 259-264
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Microstructural analysis and modelling of thin porous silicon layers with variable angle spectroscopic ellipsometry
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
ANODIC OXIDATION;
CRYSTALLINE MATERIALS;
ELLIPSOMETRY;
FILM GROWTH;
HYDROFLUORIC ACID;
MATHEMATICAL MODELS;
MULTILAYERS;
POROSITY;
SPECTROSCOPIC ANALYSIS;
THIN FILMS;
CONSTANT CURRENT DENSITY;
HYDROFLUORIC ACID ELECTROLYTE;
THIN POROUS SILICON LAYERS;
VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;
POROUS SILICON;
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EID: 0030409249
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-431-259 Document Type: Conference Paper |
Times cited : (2)
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References (20)
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