Advantages of low voltage applications and issues to be solved in SOI technology

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 4-5

  Yoshimi, M ^a   Terauchi, M ^a   Nishiyama, A ^a   Numano, M ^a   Kubota, H ^a   Watanabe, S ^a   Tango, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON TUNNELING; INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; LSI CIRCUITS; MOSFET DEVICES; RANDOM ACCESS STORAGE; SEMICONDUCTOR MATERIALS; SUBSTRATES;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); FLOATING BODY EFFECT;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0030408727     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)