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Volumn , Issue 39, 1996, Pages

Application of porous silicon technology to optical waveguiding

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTROLUMINESCENCE; OPTICAL WAVEGUIDES; POROUS SILICON; QUANTUM EFFICIENCY; QUANTUM ELECTRONICS; SILICON WAFERS; VLSI CIRCUITS;

EID: 0030408613     PISSN: 09633308     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (8)

References (12)
  • 1
    • 6044258144 scopus 로고    scopus 로고
    • Progress towards silicon optoelectronics using porous silicon technology
    • L T Canham, T I Cox, A Loni, and A J Simons, "Progress towards silicon optoelectronics using porous silicon technology", to be pubished, Appl Surf Science
    • Appl Surf Science
    • Canham, L.T.1    Cox, T.I.2    Loni, A.3    Simons, A.J.4
  • 2
    • 0029345914 scopus 로고
    • Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation
    • A Loni, A J Simons, T I Cox, PDJ Calcott, and L T Canham, "Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation", Elect Lett. 31(15), 1288 (1995).
    • (1995) Elect Lett. , vol.31 , Issue.15 , pp. 1288
    • Loni, A.1    Simons, A.J.2    Cox, T.I.3    Calcott, P.D.J.4    Canham, L.T.5
  • 3
    • 84885757292 scopus 로고
    • Electolytic shaping of germanium and silicon
    • A Uhlir, "Electolytic shaping of germanium and silicon", Bell Syst Tech J, 35, 333 (1956).
    • (1956) Bell Syst Tech J , vol.35 , pp. 333
    • Uhlir, A.1
  • 4
    • 0019530139 scopus 로고
    • A new dielectric isolation method using porous silicon
    • K Imai, "A new dielectric isolation method using porous silicon", Solid State Elect, 24, 159 (1981).
    • (1981) Solid State Elect , vol.24 , pp. 159
    • Imai, K.1
  • 5
    • 0141775174 scopus 로고
    • Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
    • L T Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers", Appl Phys Lett, 57, 1046 (1990).
    • (1990) Appl Phys Lett , vol.57 , pp. 1046
    • Canham, L.T.1
  • 6
    • 0004663160 scopus 로고
    • A new silicon-on-insulator structure using silicon MBE growth on porous silicon
    • S Konaka M Tabe, and T Sakai, "A new silicon-on-insulator structure using silicon MBE growth on porous silicon", Appl Phys Lett, 41, 86 (1982).
    • (1982) Appl Phys Lett , vol.41 , pp. 86
    • Konaka, S.1    Tabe, M.2    Sakai, T.3
  • 7
    • 0024067037 scopus 로고
    • Fabrication of silicon microstructures based on selective formation and etching of porous silicon
    • X-Z Tu, "Fabrication of silicon microstructures based on selective formation and etching of porous silicon", J Electrochem Soc. 135(8), 2105 (1988).
    • (1988) J Electrochem Soc. , vol.135 , Issue.8 , pp. 2105
    • Tu, X.-Z.1
  • 10
    • 0000009675 scopus 로고
    • Enhanced optical properties in porous silicon microcavities
    • V Pellegrini, A Tredicucci, C Mazzoleni, and L Pavesi "Enhanced optical properties in porous silicon microcavities", Phys Rev B, 52(20), R14328 (1995).
    • (1995) Phys Rev B , vol.52 , Issue.20
    • Pellegrini, V.1    Tredicucci, A.2    Mazzoleni, C.3    Pavesi, L.4
  • 12
    • 0347125422 scopus 로고
    • Oxidized porous silicon based waveguide for optical interconnections
    • Eds L Shi, L H Spiekman, and X J Leitjens Delft University Press
    • V P Bondarenko, A M Dorofeev, and N M Kazuchits, "Oxidized porous silicon based waveguide for optical interconnections". Proc 7th European Conference on Integrated Optics. Eds L Shi, L H Spiekman, and X J Leitjens (Delft University Press. 1995), 291.
    • (1995) Proc 7th European Conference on Integrated Optics , pp. 291
    • Bondarenko, V.P.1    Dorofeev, A.M.2    Kazuchits, N.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.