High-power continuous-wave operation of 512-nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH laser diodes

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1996, Pages 145-146

  Nakayama, N ^a   Taniguchi, S ^a   Hino, T ^a   Nakano, K ^a   Ishibashi, A ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL COATINGS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CATASTROPIC OPTICAL DAMAGE; DIELECTRIC STACKS; OPTICAL DAMAGE; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0030408227     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)