Integration of ICP high-density plasma CVD with CMP and its effects on planarity for sub-0.5-um CMOS technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2875, Issue , 1996, Pages 265-274

  Yota, Jiro ^a   Brongo, Maureen R ^a   Dyer, Thomas W ^a   Rafftesaeth, Kenneth P ^a   Bondur, James A ^a  

^a Rockwell Semiconductor Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; OPTIMIZATION; OXIDES; PLASMA DEVICES; TECHNOLOGY;

HIGH DENSITY PLASMA; INDUCTIVELY COUPLED PLASMA;

CMOS INTEGRATED CIRCUITS;

EID: 0030407836     PISSN: None     EISSN: None     Source Type: None    
DOI: 10.1117/12.250875     Document Type: Conference Paper

References (14)