Improvement of the ITO-p interface in a-Si:H solar cells using a thin SiO intermediate layer

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 861-865

  Nunes de Carvalho, C ^a   de Nijs, J M M ^a   Ferreira, I ^a   Fortunato, E ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC PROPERTIES; EVAPORATION; INTERFACES (MATERIALS); OPTICAL PROPERTIES; OPTIMIZATION; PERFORMANCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; SILICON SOLAR CELLS; SURFACE TREATMENT;

HYDROGENATED AMORPHOUS SILICON; INDIUM TIN OXIDE; SILICON MONOXIDE; THERMAL EVAPORATION;

THIN FILMS;

EID: 0030407693     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-861     Document Type: Conference Paper

References (8)