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Volumn 424, Issue , 1996, Pages 97-102
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Energy levels of defects in a-Si:H from optical and electrical characteristics
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
CORRELATION METHODS;
DEFECTS;
ELECTRIC FIELD EFFECTS;
ELECTRONIC DENSITY OF STATES;
ENERGY GAP;
LIGHT INTERFERENCE;
QUALITY CONTROL;
REFRACTIVE INDEX;
SPECTROSCOPIC ANALYSIS;
THIN FILM TRANSISTORS;
FIELD EFFECT CONDUCTIVITY (FEC);
HYDROGENATED SILICON FILMS;
THIN FILMS;
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EID: 0030407146
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-424-97 Document Type: Conference Paper |
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Times cited : (1)
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References (16)
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