Controlled grain size and location in Ge thin films on silicon dioxide by low temperature selective solid phase crystallization

Materials Research Society Symposium - Proceedings

Volumn 403, Issue , 1996, Pages 113-118

  Yang, C M ^a   Atwater, Harry A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; EPITAXIAL GROWTH; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NUCLEATION; REACTION KINETICS; SILICA; THIN FILMS;

SELECTIVE SOLID PHASE CRYSTALLIZATION;

GERMANIUM ALLOYS;

EID: 0030405480     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)