Isoelectronic hydrogen-related defects in silicon

Semiconductor Science and Technology

Volumn 11, Issue 12, 1996, Pages 1796-1803

  Kaminskii, A S ^a   Lavrov, E V ^a   Davies, Gordon ^b   Lightowlers, E C ^b   Safonov, A N ^b  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^b KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION DAMAGE CENTERS; RADIATIVE LIFETIMES;

BINDING ENERGY; CRYSTAL DEFECTS; CRYSTAL LATTICES; EXCITONS; LUMINESCENCE OF INORGANIC SOLIDS; MAGNETIC FIELD EFFECTS; RADIATION DAMAGE;

SEMICONDUCTING SILICON;

EID: 0030403750     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/12/006     Document Type: Article

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