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Journal of Materials Research

Volumn 11, Issue 12, 1996, Pages 3077-3082

Effect of defect structure on gas sensitivity of LaCrO3

(2) Huang, Rong Fong a Howng, Wei Yean a

a MOTOROLA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALCOHOLS; COMPOSITION EFFECTS; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY; IONS; MATHEMATICAL MODELS; POINT DEFECTS; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; TITANIUM DIOXIDE;

CATIONS; DEFECT STRUCTURE; DOPANTS; GAS SENSITIVITY; ISOPROPYL ALCOHOL; SEMICONDUCTING LANTHANUM COMPOUNDS;

LANTHANUM COMPOUNDS;

EID: 0030403191 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.1996.0391 Document Type: Article

Times cited : (14)

References (14)

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