Hot-carrier-induced degradation in ultra-thin-film fully-depleted soi MOSFETs

Solid-State Electronics

Volumn 39, Issue 12, 1996, Pages 1791-1794

  Yu, Bin ^a   Ma, Zhi Jian ^a   Zhang, George ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE MEASUREMENT; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); OXIDES; SILICON ON INSULATOR TECHNOLOGY; STRESSES; SUBSTRATES; ULTRATHIN FILMS;

BURIED OXIDE (BOX) INTERFACES; CHARGE PUMPING MEASUREMENT TECHNIQUE; DRAIN CURRENT DEGRADATION; GATE OXIDE INTERFACES;

MOSFET DEVICES;

EID: 0030403025     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00095-0     Document Type: Article

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