Improvement of poly-silicon thin films and thin film transistors using ultrasound treatment

Materials Research Society Symposium - Proceedings

Volumn 424, Issue , 1996, Pages 201-206

  Ostapenko, S ^a   Jastrzebski, L ^a   Lagowski, J ^a   Smeltzer, R K ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRONIC PROPERTIES; GRAIN BOUNDARIES; HYDROGENATION; LEAKAGE CURRENTS; PASSIVATION; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; THIN FILM TRANSISTORS; ULTRASONIC APPLICATIONS; ULTRASONIC EFFECTS;

ATOMIC HYDROGEN; NANOSCALE CONTACT POTENTIAL DIFFERENCE; ULTRASOUND TREATMENT (UST);

THIN FILMS;

EID: 0030402678     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-424-201     Document Type: Conference Paper

References (12)