MOCVD-grown wider-bandgap capping layers in Hg1-xCdxTe long-wavelength infrared photoconductors

Semiconductor Science and Technology

Volumn 11, Issue 12, 1996, Pages 1912-1922

  Musca, C A ^a   Siliquini, J F ^a   Fynn, K A ^a   Nener, B D ^a   Faraone, L ^a   Irvine, S J C ^b,c  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b ROCKWELL SCIENCE CENTER   (United States)

^c GLYNDWR UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYERS; HETEROINTERFACES; LONG WAVELENGTH INFRARED (LWIR);

CARRIER CONCENTRATION; ENERGY GAP; HETEROJUNCTIONS; INTERFACES (MATERIALS); LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTING MATERIALS;

INFRARED DETECTORS;

EID: 0030402033     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/12/025     Document Type: Article

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