Effects of random MOSFET parameter fluctuations on total power consumption

IEEE Symposium on Low Power Electronics

Volumn , Issue , 1996, Pages 233-236

  Tang, Xinghai ^a   De, Vivek K ^a   Meindl, James D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ENERGY DISSIPATION; ENERGY UTILIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

SATURATION DRAIN CURRENT; SUBTHRESHOLD LEAKAGE CURRENT; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0030401910     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)