Photoconductivity of a-Si:H as a function of doping, temperature and photocarrier generation rates between 1013 and 1028cm-3s-1

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 765-770

  Stradins, P ^a   Fritzsche, H ^a   Kopidakis, N ^a   Tzanetakis, P ^a  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; ELECTRONS; PHOTOCONDUCTIVITY; SEMICONDUCTOR DOPING; TEMPERATURE;

HYDROGENATED AMORPHOUS SILICON; PHOTOCARRIER GENERATION RATE; PHOTODEGRADATION;

AMORPHOUS SILICON;

EID: 0030401080     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-765     Document Type: Conference Paper

References (13)