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Volumn , Issue , 1996, Pages 227-230
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Dopant level freeze-out in 6H-SiC Schottky diodes and junctions
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
ALUMINUM;
CARRIER CONCENTRATION;
CRYSTAL STRUCTURE;
ELECTRIC IMPEDANCE MEASUREMENT;
ELECTRON ENERGY LEVELS;
NITROGEN;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR JUNCTIONS;
SILICON CARBIDE;
SPECTROSCOPY;
MAJORITY CARRIER TRAPS;
THERMAL ADMITTANCE SPECTROSCOPY;
SCHOTTKY BARRIER DIODES;
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EID: 0030400903
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (2)
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References (11)
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